Amandla alinganiselwe: 10-400W;
Izinto ze-Substrate: BeO, AlN
Inani lokumelana nezizinda: 100 Ω (10-3000 Ω ozikhethela)
Ukumelana nokubekezelela: ± 5%, ± 2%, ± 1%
I-coefficient yezinga lokushisa: < 150ppm/℃
Izinga lokushisa lokusebenza: -55~+150 ℃
I-ROHS ejwayelekile: Ihambisana nayo
Izinga elisebenzayo: Q/RFTYTR001-2022
Ubude bokuhola: L njengoba kucacisiwe eshidini lokucaciswa (kungenziwa ngezifiso ngokuya ngezidingo zekhasimende)
Amandla W | Amandla PF﹫100Ω | Ubukhulu (iyunithi: mm) | I-Substrate Material | Ukucushwa | Ishidi Ledatha(PDF) | |||||
A | B | H | G | W | L | |||||
5 | / | 2.2 | 1.0 | 0.4 | 0.8 | 0.7 | 1.5 | BeO | A | RFTXX-05RJ1022 |
10 | 2.4 | 2.5 | 5.0 | 1.0 | 2.0 | 1.0 | 3.0 | I-AlN | A | RFTXXN-10RM2550 |
1.8 | 2.5 | 5.0 | 1.0 | 2.0 | 1.0 | 3.0 | BeO | A | RFTXX-10RM2550 | |
/ | 5.0 | 2.5 | 1.0 | 2.0 | 1.0 | 4.0 | BeO | B | RFTXX-10RM5025C | |
2.3 | 4.0 | 4.0 | 1.0 | 1.8 | 1.0 | 4.0 | I-AlN | A | RFTXXN-10RM0404 | |
1.2 | 4.0 | 4.0 | 1.0 | 1.8 | 1.0 | 4.0 | BeO | A | RFTXX-10RM0404 | |
20 | 2.4 | 2.5 | 5.0 | 1.0 | 2.0 | 1.0 | 3.0 | I-AlN | A | RFTXXN-20RM2550 |
1.8 | 2.5 | 5.0 | 1.0 | 2.0 | 1.0 | 3.0 | BeO | A | RFTXX-20RM2550 | |
/ | 5.0 | 2.5 | 1.0 | 2.0 | 1.0 | 4.0 | BeO | B | RFTXX-20RM5025C | |
2.3 | 4.0 | 4.0 | 1.0 | 1.8 | 1.0 | 4.0 | I-AlN | A | RFTXXN-20RM0404 | |
1.2 | 4.0 | 4.0 | 1.0 | 1.8 | 1.0 | 4.0 | BeO | A | RFTXX-20RM0404 | |
30 | 2.9 | 6.0 | 6.0 | 1.0 | 1.8 | 1.0 | 5.0 | I-AlN | A | RFTXXN-30RM0606 |
2.6 | 6.0 | 6.0 | 1.0 | 1.8 | 1.0 | 5.0 | BeO | A | RFTXX-30RM0606 | |
1.2 | 6.0 | 6.0 | 3.5 | 4.3 | 1.0 | 5.0 | BeO | A | RFTXX-30RM0606F | |
60 | 2.9 | 6.0 | 6.0 | 1.0 | 1.8 | 1.0 | 5.0 | I-AlN | A | RFTXXN-60RM0606 |
2.6 | 6.0 | 6.0 | 1.0 | 1.8 | 1.0 | 5.0 | BeO | A | RFTXX-60RM0606 | |
1.2 | 6.0 | 6.0 | 3.5 | 4.3 | 1.0 | 5.0 | BeO | A | RFTXX-60RM0606F | |
/ | 6.35 | 6.35 | 1.0 | 1.8 | 1.0 | 5.0 | I-AlN | A | RFTXXN-60RJ6363 | |
/ | 6.35 | 6.35 | 1.0 | 1.8 | 1.0 | 5.0 | BeO | A | RFTXX-60RM6363 | |
100 | 2.6 | 6.0 | 6.0 | 1.0 | 1.8 | 1.0 | 5.0 | BeO | A | RFTXX-60RM0606 |
2.5 | 8.9 | 5.7 | 1.0 | 1.5 | 1.0 | 5.0 | I-AlN | A | RFTXXN-100RJ8957 | |
2.1 | 8.9 | 5.7 | 1.5 | 2.0 | 1.0 | 5.0 | I-AlN | A | I-RFTXXN-100RJ8957B | |
3.2 | 9.0 | 6.0 | 1.0 | 1.8 | 1.0 | 5.0 | BeO | A | RFTXX-100RM0906 | |
5.6 | 10.0 | 10.0 | 1.0 | 1.8 | 2.5 | 5.0 | BeO | A | RFTXX-100RM1010 | |
Amandla W | Amandla PF﹫100Ω | Ubukhulu (iyunithi: mm) | I-Substrate Material | Ukucushwa | Ishidi Ledatha(PDF) | |||||
A | B | H | G | W | L | |||||
150 | 3.9 | 9.5 | 6.4 | 1.0 | 1.8 | 1.4 | 6.0 | BeO | A | RFTXX-150RM6395 |
5.6 | 10.0 | 10.0 | 1.0 | 1.8 | 2.5 | 6.0 | BeO | A | RFTXX-150RM1010 | |
200 | 5.6 | 10.0 | 10.0 | 1.0 | 1.8 | 2.5 | 6.0 | BeO | A | RFTXX-200RM1010 |
4.0 | 10.0 | 10.0 | 1.5 | 2.3 | 2.5 | 6.0 | BeO | A | RFTXX-200RM1010B | |
250 | 5.0 | 12.0 | 10.0 | 1.0 | 1.8 | 2.5 | 6.0 | BeO | A | RFTXX-250RM1210 |
/ | 8.0 | 7.0 | 1.5 | 2.0 | 1.4 | 5.0 | I-AlN | A | RFTXXN-250RJ0708 | |
2.0 | 12.7 | 12.7 | 6.0 | 6.8 | 2.5 | 6.0 | BeO | A | RFTXX-250RM1313K | |
300 | 5.0 | 12.0 | 10.0 | 1.0 | 1.8 | 2.5 | 6.0 | BeO | A | RFTXX-300RM1210 |
2.0 | 12.7 | 12.7 | 6.0 | 6.8 | 2.5 | 6.0 | BeO | A | RFTXX-300RM1313K | |
400 | 8.5 | 12.7 | 12.7 | 1.5 | 2.3 | 2.5 | 6.0 | BeO | A | RFTXX-400RM1313 |
2.0 | 12.7 | 12.7 | 6.0 | 6.8 | 2.5 | 6.0 | BeO | A | RFTXX-400RM1313K |
Lolu hlobo lwe-resistor alufiki nama-flange engeziwe noma ama-fins okukhipha ukushisa, kodwa lufakwa ngokuqondile ebhodini lesifunda ngokusebenzisa izindlela zokushisela, i-SMD noma ibhodi lesifunda eliphrintiwe le-surface mount (SMD).Ngenxa yokungabikho kwama-flanges, ubukhulu ngokuvamile buncane, okwenza kube lula ukuyifaka kumabhodi wesifunda esihlangene, okuvumela ukuklama kwesifunda sokuhlanganiswa okuphezulu.
Ngenxa yesakhiwo esingenakho ukuchithwa kokushisa kwe-flange, lesi sithasi sifaneleka kuphela izinhlelo zokusebenza zamandla aphansi futhi asifaneleki kumasekhethi anamandla aphezulu kanye nokukhipha ukushisa.
Inkampani yethu ingakwazi futhi ukwenza ngezifiso ama-resistors ngokuya ngezidingo ezithile zamakhasimende.
I-resistor eholayo ingenye yezingxenye ezivame ukusetshenziswa ezingenzi lutho kumasekhethi e-elekthronikhi, ezinomsebenzi wokulinganisa amasekhethi.
Ilungisa inani lokumelana kumjikelezo ukuze kuzuzwe isimo esilinganiselwe samanje noma i-voltage, ngaleyo ndlela izuze ukusebenza okuzinzile kwesifunda.
Idlala indima ebalulekile emishinini kagesi nasezinhlelweni zokuxhumana.
Kumjikelezo, lapho inani lokumelana lingalingani, i-current noma i-voltage izosatshalaliswa ngokungalingani, okuholela ekungazinzi kwesifunda.
I-resistor eholayo ingakwazi ukulinganisa ukusatshalaliswa kwamanje noma i-voltage ngokulungisa ukumelana kumjikelezo.
I-flange balancing resistor ilungisa inani lokumelana kusekethe ukuze lisabalalise ngokulinganayo lamanje noma i-voltage kuwo wonke amagatsha ahlukahlukene, ngaleyo ndlela kuzuzwe ukusebenza okulinganiselayo kwesekethe.
I-resistor eholayo ingasetshenziswa kabanzi kuma-amplifiers alinganiselayo, amabhuloho alinganiselayo, nezinhlelo zokuxhumana
Inani lokumelana le-lead kufanele likhethwe ngokusekelwe ezidingweni ezithile zesifunda kanye nezici zesignali.
Ngokuvamile, inani lokumelana kufanele lifane nenani lokumelana nesici somjikelezo ukuze kuqinisekiswe ibhalansi nokusebenza okuzinzile kwesifunda.
Amandla we-resistor eholayo kufanele akhethwe ngokuvumelana nezidingo zamandla wesekethe.Ngokuvamile, amandla we-resistor kufanele abe mkhulu kunamandla amakhulu wesifunda ukuze kuqinisekiswe ukusebenza kwawo okuvamile.
I-resistor eholayo ihlanganiswa ngokushisela i-flange kanye ne-double lead resistor.
I-flange yakhelwe ukufakwa kumasekhethi futhi ingahlinzeka ngokukhipha ukushisa okungcono kwama-resistors ngesikhathi sokusetshenziswa.
Inkampani yethu ingakwazi futhi ukwenza ngokwezifiso ama-flange nama-resistors ngokuya ngezidingo ezithile zamakhasimende.