| I-RFTYT Microstrip Attenuator | |||||||
| Amandla | Ububanzi bemvamisa (GHz) | Ubukhulu be-substrate (mm) | Izinto | Inani Lokunciphisa (dB) | Ishidi Ledatha (i-PDF) | ||
| W | L | H | |||||
| 2W | I-DC-12.4 | 5.2 | 6.35 | 0.5 | Al2O3 | 01-10, 15, 20, 25, 30 | I-RFTXXA-02MA5263-12.4 |
| DC-18.0 | 4.4 | 3.0 | 0.38 | Al2O3 | 01-10 | I-RFTXXA-02MA4430-18 | |
| 4.4 | 6.35 | 0.38 | Al2O3 | 15, 20, 25, 30 | I-RFTXXA-02MA4463-18 | ||
| 5W | I-DC-12.4 | 5.2 | 6.35 | 0.5 | I-BeO | 01-10, 15, 20, 25, 30 | I-RFTXX-05MA5263-12.4 |
| DC-18.0 | 4.5 | 6.35 | 0.5 | I-BeO | 01-10, 15, 20, 25, 30 | I-RFTXX-05MA4563-18 | |
| 10W | I-DC-12.4 | 5.2 | 6.35 | 0.5 | I-BeO | 01-10, 15, 20, 25, 30 | I-RFTXX-10MA5263-12.4 |
| DC-18.0 | 5.4 | 10.0 | 0.5 | I-BeO | 01-10, 15, 17, 20, 25, 27, 30 | I-RFTXX-10MA5410-18 | |
| 20W | DC-10.0 | 9.0 | 19.0 | 0.5 | I-BeO | 01-10, 15, 20, 25, 30, 36.5, 40, 50 | I-RFTXX-20MA0919-10 |
| DC-18.0 | 5.4 | 22.0 | 0.5 | I-BeO | 01-10,15,20,25,30,35,40,50,60 | I-RFTXX-20MA5422-18 | |
| 30W | DC-10.0 | 11.0 | 32.0 | 0.7 | I-BeO | 01-10, 15, 20, 25, 30 | I-RFTXX-30MA1132-10 |
| 50W | I-DC-4.0 | 25.4 | 25.4 | 3.2 | I-BeO | 03,06,10,15,20,30 | I-RFTXX-50MA2525-4 |
| I-DC-6.0 | 12.0 | 40.0 | 1.0 | I-BeO | 01-30, 40, 50, 60 | I-RFTXX-50MA1240-6 | |
| I-DC-8.0 | 12.0 | 40.0 | 1.0 | I-BeO | 01-30,40 | I-RFTXX-50MA1240-8 | |
I-Microstrip attenuator uhlobo lwe-attenuation chip. Okubizwa ngokuthi "i-spin on" kuyisakhiwo sokufaka. Ukuze usebenzise lolu hlobo lwe-attenuation chip, kudingeka isembozo somoya esiyindilinga noma esiyisikwele, esitholakala kuzo zombili izinhlangothi ze-substrate.
Izingqimba ezimbili zesiliva ezinhlangothini zombili zesisekelo somhlaba ohlangothini lobude zidinga ukuqiniswa.
Ngesikhathi sokusetshenziswa, inkampani yethu inganikeza amakhasimende izembozo zomoya zobukhulu obuhlukene kanye nemvamisa mahhala.
Abasebenzisi bangacubungula imikhono ngokuya ngobukhulu besembozo somoya, futhi umsele womkhono kufanele ube mkhulu kunobukhulu besisekelo.
Ngemuva kwalokho, umphetho we-elastic oqhubayo ugoqwa emaphethelweni amabili omhlaba we-substrate bese ufakwa esikhwameni.
Umngcele wangaphandle wesikhafu uhambisana nesinki yokushisa ehambisana namandla.
Izixhumi ezinhlangothini zombili zixhunywe emgodini ngezintambo, futhi ukuxhumana phakathi kwesixhumi nepuleti lokuncishiswa kwe-microstrip elijikelezayo kwenziwa ngephini elincishisiwe, elixhumene nokuncishiswa nohlangothi lwepuleti lokuncishiswa.
I-Rotary microstrip attenuator ingumkhiqizo onezimpawu zemvamisa ephezulu kakhulu phakathi kwawo wonke ama-chip, futhi iyisinqumo esiyinhloko sokwenza ama-high-frequency attenuator.
Isimiso sokusebenza se-microstrip attenuator sisekelwe kakhulu endleleni yokusebenza kwe-signal attenuation. Sinciphisa izimpawu ze-microwave ngesikhathi sokudluliselwa ku-chip ngokukhetha izinto ezifanele nokuklama izakhiwo. Ngokuvamile, ama-attenuation chips asebenzisa izindlela ezifana nokumunca, ukusabalalisa, noma ukubonakalisa ukuze kufezwe i-attenuation. Lezi zindlela zingalawula i-attenuation kanye nempendulo yemvamisa ngokulungisa amapharamitha ezinto ze-chip kanye nesakhiwo.
Isakhiwo sama-microstrip attenuators ngokuvamile siqukethe imigqa yokudlulisela i-microwave kanye namanethiwekhi okufanisa i-impedance. Imigqa yokudlulisela i-microwave iyiziteshi zokudlulisela isignali, futhi izici ezifana nokulahlekelwa ukudluliswa kanye nokulahlekelwa ukubuya kufanele zicatshangelwe ekwakhiweni. Inethiwekhi yokufanisa i-impedance isetshenziselwa ukuqinisekisa ukuncishiswa okuphelele kwesignali, okuhlinzeka ngenani elinembile kakhulu lokuncishiswa.
Inani lokunciphisa le-microstrip attenuator esilinikezayo lizinzile futhi aliguquguquki, futhi linokuqina nokuthembeka, okungasetshenziswa ezimweni lapho ukulungiswa okuvamile kungadingeki. Ama-fixed attenuator asetshenziswa kabanzi ezinhlelweni ezifana ne-radar, ukuxhumana ngesathelayithi, kanye nokulinganisa i-microwave.