Ukuqedwa kwe-Chip
Imininingwane yobuchwepheshe eyinhloko:
Amandla Alinganisiwe: 10-500W ;
Izinto ezingaphansi komhlaba: BeO、AlN、Al2O3
Inani lokumelana elijwayelekile: 50Ω
Ukubekezelelana kokumelana: ± 5%, ± 2%, ± 1%
i-emperature coefficient: <150ppm/℃
Izinga lokushisa lokusebenza: -55~+150℃
Izinga le-ROHS: Lihambisana ne
Izinga elisebenzayo: Q/RFTYTR001-2022
| Amandla(W) | Imvamisa | Ubukhulu (iyunithi: mm) | I-substrateIzinto | Ukucushwa | Ishidi Ledatha (i-PDF) | ||||||
| A | B | C | D | E | F | G | |||||
| 10W | 6GHz | 2.5 | 5.0 | 0.7 | 2.4 | / | 1.0 | 2.0 | I-AlN | UMFANEKISO 2 | I-RFT50N-10CT2550 |
| 10GHz | 4.0 | 4.0 | 1.0 | 1.27 | 2.6 | 0.76 | 1.40 | I-BeO | UMFANEKISO 1 | I-RFT50-10CT0404 | |
| 12W | 12GHz | 1.5 | 3 | 0.38 | 1.4 | / | 0.46 | 1.22 | I-AlN | UMFANEKISO 2 | I-RFT50N-12CT1530 |
| 20W | 6GHz | 2.5 | 5.0 | 0.7 | 2.4 | / | 1.0 | 2.0 | I-AlN | UMFANEKISO 2 | I-RFT50N-20CT2550 |
| 10GHz | 4.0 | 4.0 | 1.0 | 1.27 | 2.6 | 0.76 | 1.40 | I-BeO | UMFANEKISO 1 | I-RFT50-20CT0404 | |
| 30W | 6GHz | 6.0 | 6.0 | 1.0 | 1.3 | 3.3 | 0.76 | 1.8 | I-AlN | UMFANEKISO 1 | RFT50N-30CT0606 |
| 60W | 6GHz | 6.0 | 6.0 | 1.0 | 1.3 | 3.3 | 0.76 | 1.8 | I-AlN | UMFANEKISO 1 | RFT50N-60CT0606 |
| 100W | 5GHz | 6.35 | 6.35 | 1.0 | 1.3 | 3.3 | 0.76 | 1.8 | I-BeO | UMFANEKISO 1 | I-RFT50-100CT6363 |
Ukuqedwa kwe-Chip
Imininingwane yobuchwepheshe eyinhloko:
Amandla Alinganisiwe: 10-500W ;
Izinto ze-substrate: BeO 、 AlN
Inani lokumelana elijwayelekile: 50Ω
Ukubekezelelana kokumelana: ± 5%, ± 2%, ± 1%
i-emperature coefficient: <150ppm/℃
Izinga lokushisa lokusebenza: -55~+150℃
Izinga le-ROHS: Lihambisana ne
Izinga elisebenzayo: Q/RFTYTR001-2022
Usayizi wejoyinti le-Solder: bheka ishidi lokucacisa
(kungenziwa ngezifiso ngokwezidingo zamakhasimende)
| Amandla(W) | Imvamisa | Ubukhulu (iyunithi: mm) | I-substrateIzinto | Ishidi Ledatha (i-PDF) | ||||
| A | B | C | D | H | ||||
| 10W | 6GHz | 4.0 | 4.0 | 1.1 | 0.9 | 1.0 | I-AlN | I-RFT50N-10WT0404 |
| 8GHz | 4.0 | 4.0 | 1.1 | 0.9 | 1.0 | I-BeO | I-RFT50-10WT0404 | |
| 10GHz | 5.0 | 2.5 | 1.1 | 0.6 | 1.0 | I-BeO | I-RFT50-10WT5025 | |
| 20W | 6GHz | 4.0 | 4.0 | 1.1 | 0.9 | 1.0 | I-AlN | I-RFT50N-20WT0404 |
| 8GHz | 4.0 | 4.0 | 1.1 | 0.9 | 1.0 | I-BeO | I-RFT50-20WT0404 | |
| 10GHz | 5.0 | 2.5 | 1.1 | 0.6 | 1.0 | I-BeO | I-RFT50-20WT5025 | |
| 30W | 6GHz | 6.0 | 6.0 | 1.1 | 1.1 | 1.0 | I-AlN | RFT50N-30WT0606 |
| 60W | 6GHz | 6.0 | 6.0 | 1.1 | 1.1 | 1.0 | I-AlN | RFT50N-60WT0606 |
| 100W | 3GHz | 8.9 | 5.7 | 1.8 | 1.2 | 1.0 | I-AlN | I-RFT50N-100WT8957 |
| 6GHz | 8.9 | 5.7 | 1.8 | 1.2 | 1.0 | I-AlN | I-RFT50N-100WT8957B | |
| 8GHz | 9.0 | 6.0 | 1.4 | 1.1 | 1.5 | I-BeO | I-RFT50N-100WT0906C | |
| 150W | 3GHz | 6.35 | 9.5 | 2.0 | 1.1 | 1.0 | I-AlN | I-RFT50N-150WT6395 |
| 9.5 | 9.5 | 2.4 | 1.5 | 1.0 | I-BeO | I-RFT50-150WT9595 | ||
| 4GHz | 10.0 | 10.0 | 2.6 | 1.7 | 1.5 | I-BeO | I-RFT50-150WT1010 | |
| 6GHz | 10.0 | 10.0 | 2.6 | 1.7 | 1.5 | I-BeO | I-RFT50-150WT1010B | |
| 200W | 3GHz | 9.55 | 5.7 | 2.4 | 1.0 | 1.0 | I-AlN | I-RFT50N-200WT9557 |
| 9.5 | 9.5 | 2.4 | 1.5 | 1.0 | I-BeO | I-RFT50-200WT9595 | ||
| 4GHz | 10.0 | 10.0 | 2.6 | 1.7 | 1.5 | I-BeO | I-RFT50-200WT1010 | |
| 10GHz | 12.7 | 12.7 | 2.5 | 1.7 | 2.0 | I-BeO | I-RFT50-200WT1313B | |
| 250W | 3GHz | 12.0 | 10.0 | 1.5 | 1.5 | 1.5 | I-BeO | I-RFT50-250WT1210 |
| 10GHz | 12.7 | 12.7 | 2.5 | 1.7 | 2.0 | I-BeO | I-RFT50-250WT1313B | |
| 300W | 3GHz | 12.0 | 10.0 | 1.5 | 1.5 | 1.5 | I-BeO | I-RFT50-300WT1210 |
| 10GHz | 12.7 | 12.7 | 2.5 | 1.7 | 2.0 | I-BeO | I-RFT50-300WT1313B | |
| 400W | 2GHz | 12.7 | 12.7 | 2.5 | 1.7 | 2.0 | I-BeO | I-RFT50-400WT1313 |
| 500W | 2GHz | 12.7 | 12.7 | 2.5 | 1.7 | 2.0 | I-BeO | I-RFT50-500WT1313 |
Ama-resistors e-chip terminal adinga ukukhetha osayizi abafanele kanye nezinto ze-substrate ngokusekelwe kumandla ahlukene kanye nezidingo zemvamisa. Izinto ze-substrate ngokuvamile zenziwe nge-beryllium oxide, i-aluminium nitride, kanye ne-aluminium oxide ngokusebenzisa ukumelana nokuphrinta kwesekethe.
Ama-resistors e-chip terminal angahlukaniswa abe amafilimu amancane noma amafilimu amakhulu, anosayizi abahlukahlukene abajwayelekile kanye nezinketho zamandla. Singaxhumana nathi futhi ukuthola izixazululo ezenziwe ngokwezifiso ngokuya ngezidingo zamakhasimende.
Ubuchwepheshe bokufaka i-surface mount (SMT) buyindlela evamile yokupakisha izingxenye ze-elekthronikhi, evame ukusetshenziswa ekufakeni i-surface yamabhodi wesekethe. Ama-Chip resistors uhlobo olulodwa lwe-resistor olusetshenziselwa ukukhawulela ugesi, ukulawula i-circuit impedance, kanye ne-voltage yendawo.
Ngokungafani nama-socket resistors endabuko, ama-patch terminal resistors awadingi ukuxhunywa ebhodini lesifunda ngama-socket, kodwa ahlanganiswa ngqo ebusweni bebhodi lesifunda. Leli fomu lokupakisha lisiza ekuthuthukiseni ukuqina, ukusebenza, kanye nokuthembeka kwamabhodi esifunda.
Ama-resistors e-chip terminal adinga ukukhetha osayizi abafanele kanye nezinto ze-substrate ngokusekelwe kumandla ahlukene kanye nezidingo zemvamisa. Izinto ze-substrate ngokuvamile zenziwe nge-beryllium oxide, i-aluminium nitride, kanye ne-aluminium oxide ngokusebenzisa ukumelana nokuphrinta kwesekethe.
Ama-resistors e-chip terminal angahlukaniswa abe amafilimu amancane noma amafilimu amakhulu, anosayizi abahlukahlukene abajwayelekile kanye nezinketho zamandla. Singaxhumana nathi futhi ukuthola izixazululo ezenziwe ngokwezifiso ngokuya ngezidingo zamakhasimende.
Inkampani yethu isebenzisa isofthiwe ejwayelekile yomhlaba wonke i-HFSS yokuklama nokuthuthukiswa kokulingisa kobungcweti. Kwenziwe izivivinyo ezikhethekile zokusebenza kwamandla ukuqinisekisa ukuthembeka kwamandla. Kusetshenziswe abahlaziyi benethiwekhi abangokunemba okuphezulu ukuhlola nokuhlola izinkomba zayo zokusebenza, okuholele ekusebenzeni okuthembekile.
Inkampani yethu ithuthukise futhi yaklama ama-resistors e-terminal mount surface anobukhulu obuhlukene, amandla ahlukene (njenge-resistors ye-terminal engu-2W-800W enamandla ahlukene), kanye nama-frequency ahlukene (njenge-resistors ye-terminal engu-1G-18GHz). Siyakwamukela amakhasimende ukuthi akhethe futhi asebenzise ngokwezidingo ezithile zokusebenzisa.
Ama-terminal resistors angenawo umthofu afakwe ngaphezulu, aziwa nangokuthi ama-surface mount angenawo umthofu, ayisici se-elekthronikhi esincane. Isici saso ukuthi asinawo umthofu wendabuko, kodwa athengiswa ngqo ebhodini lesifunda ngobuchwepheshe be-SMT.
Lolu hlobo lwe-resistor luvame ukuba nezinzuzo zobukhulu obuncane kanye nesisindo esilula, okuvumela ukwakheka kwebhodi lesekethe elinobukhulu obuphezulu, ukonga isikhala, kanye nokuthuthukisa ukuhlanganiswa kwesistimu iyonke. Ngenxa yokuntuleka kwama-lead, futhi ane-inductance ephansi ye-parasitic kanye ne-capacitance, okubalulekile ekusetshenzisweni kwemvamisa ephezulu, ukunciphisa ukuphazamiseka kwesignali kanye nokuthuthukisa ukusebenza kwesekethe.
Inqubo yokufaka ama-resistors e-terminal angenawo i-lead e-SMT ilula kakhulu, futhi ukufakwa kwe-batch kungenziwa ngemishini ezenzakalelayo ukuthuthukisa ukusebenza kahle kokukhiqiza. Ukusebenza kwayo kokushabalalisa ukushisa kuhle, okunganciphisa ngempumelelo ukushisa okukhiqizwa yi-resistor ngesikhathi sokusebenza futhi kuthuthukise ukuthembeka.
Ngaphezu kwalokho, lolu hlobo lwe-resistor lunokunemba okuphezulu futhi lungahlangabezana nezidingo ezahlukene zohlelo lokusebenza ngamanani okumelana aqinile. Zisetshenziswa kabanzi emikhiqizweni ye-elekthronikhi, njengezingxenye ezingasebenzi ze-RF isolators. Ama-Couplers, imithwalo ye-coaxial, kanye nezinye izinkambu.
Sekukonke, ama-resistors e-terminal angenawo umthofu e-SMT aseyingxenye ebalulekile yomklamo we-elekthronikhi wesimanje ngenxa yobukhulu bawo obuncane, ukusebenza kahle kwemvamisa ephezulu, kanye nokufakwa okulula.