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I-RFTXXN-60RM1306 I-Flanged Resistor I-RF Resistor
Imodeli RFTXXN-60RM1306 Amandla 60 W Ukumelana XX Ω (10~2000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% Umthamo 2.9 PF@100Ω Izinga lokushisa Coefficient <150ppm/℃ Isembozo se-ALN I-AL2O3 Mounting Flange I-Brass Lead 99.99% isiliva elimsulwa I-Resistive Element Thick Film Izinga lokusebenza lokushisa -55 kuya ku-+150°C (Bheka i-Power De-rating) Umdwebo Wohlaka (Iyunithi: mm) Ubude bentambo ye-lead bungahlangabezana nezidingo zekhasimende Usayizi Ukubekezelela：5% ngaphandle kokuthi kuchazwe ngenye indlela Iziphakamiso... -
I-RFTXX-60RM2006F I-Flanged Resistor I-RF Resistor
Imodeli RFTXX-60RM2006F Amandla 60 W Ukumelana XX Ω (10~2000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% Umthamo 1.2 PF@100Ω I-Coefficient Yokushisa <150ppm/℃ Isembozo se-Substrate BeO I-AL2O3 Mounting Flange I-Brass Lead 99.99% isiliva elimsulwa I-Resistive Element Thick Film I-Operating Temperature -55 kuya ku-+150°C (Bheka i-Power De-rating) Umdwebo Wohlaka (Iyunithi: mm) Ubude bentambo ye-lead bungahlangabezana nezidingo zekhasimende Usayizi Ukubekezelela：5% ngaphandle kokuthi kuchazwe ngenye indlela Iziphakamiso... -
Isithambisi se-RF se-RF se-RFXX-05CR2550B
Imodeli RFTXX-05CR2550B Amandla 5 W Ukumelana XX Ω (10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% I-Coefficient Yokushisa <150ppm/℃ I-Substrate BeO I-Resistive Element Thick Film Ukushisa Okusebenzayo -55 kuya ku-+150°C (Bheka i-Power De-rating) Umdwebo Wohlaka (Iyunithi: mm) Izinqubo zokufaka eziphakanyisiwe Ukususwa Kwesilinganiso Samandla Iphrofayili Yokugeleza Kabusha P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kwesikhathi sokugcina izingxenye ezisanda kuthengwa sidlula izinyanga eziyi-6, kuzonakwa ukuxhunyelwa... -
Isithambisi Esiholwa yi-RF se-RFXX-250RM1313K
Imodeli RFTXX-250RM1313K Amandla angu-250 W Ukumelana XX Ω~ (10-1000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% Umthamo 2.0 PF@100Ω Izinga lokushisa I-Coefficient <150ppm/℃ I-Substrate BeO Isembozo se-AL2O3 Lead Copper silver plating Resistive Element Thick Film Izinga lokushisa lokusebenza -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa kwesilinganiso samandla Iphrofayili yokugeleza kabusha P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kwesikhathi sokugcina sezingxenye ezisanda kuthengwa sidlula izinyanga ezi-6... -
I-RFTXX-10RM5025C I-Resistor Eholayo
Imodeli RFTXX-10RM5025C Amandla 10 W Ukumelana XX Ω~ (10-3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% Umthamo 1.8 PF@100Ω Izinga lokushisa Coefficient <150ppm/℃ Isembozo se-Substrate BeO AL2O3 Lead 99.99% isiliva elimsulwa i-Resistive Element Thick Film Izinga lokusebenza lokushisa -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa kwesilinganiso samandla Iphrofayili yokugeleza kabusha P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina sezingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, ... -
Isithambisi se-Chip se-RF se-RFXXN-10CR2550C
Imodeli RFTXXN-10CR2550C Amandla 10 W Ukumelana XX Ω (10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% I-Coefficient Yokushisa <150ppm/℃ I-Substrate AlN Resistive Element Thick Film Ukusebenza Kwezinga Lokushisa -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa Kwezinga Lokusebenza Kwe-Power Reflow Iphrofayili P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina izingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, kuzonakwa ukushintshwa ngaphambi kokusetshenziswa. Kunconywa... -
Isithambisi se-Chip se-RF se-RFXX-20CR2550C
Izinqubo eziphakanyisiwe zokufaka i-Power De-rating Reflow Profile P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina izingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, kufanele unake ukushiselwa ngaphambi kokusebenzisa. Kunconywa ukugcina ngemva kokupakisha nge-vacuum. ■Bhoboza ama-thermal vias nge-PCB bese ugcwalisa nge-solder. ■Ukushiselwa kwe-Reflow kukhethwa kakhulu ekushiseni, bheka i-Reflow curve ■ Ukuze kuhlangatshezwane nezidingo zomdwebo, kumele kufakwe i-radiator enobukhulu obanele. ■ Uma kudingeka,... -
I-RFTXX-30CR2550TA Isithambisi Sokumisa Okungaphezulu
Imodeli RFTXX-30CR2550TA Amandla angu-30W Ukumelana XX Ω (10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% I-Coefficient Yokushisa <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ukushisa Okusebenzayo -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa kwesilinganiso samandla Iphrofayili Yokugeleza Kabusha P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina izingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, kuzonakwa ukushintshwa ngaphambi kokusetshenziswa. Kunconywa... -
Isithambisi se-RF se-RFXX-30CR6363C Sokumisa Okungaphezulu
Imodeli RFTXX-30CR6363C Amandla 30W Ukumelana XX Ω (10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% I-Coefficient Yokushisa <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ukusebenza Kwezinga Lokushisa -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa kwesilinganiso samandla Iphrofayili Yokugeleza Kabusha P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina izingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, kuzonakwa ukushintshwa ngaphambi kokusetshenziswa. Kunconywa ... -
Isithambisi Sokumisa Okungaphezulu se-RF se-RFXX-30CR2550W
Imodeli RFTXX-30CR2550W Amandla 30 W Ukumelana XX Ω (10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% I-Coefficient Yokushisa <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ukushisa Okusebenzayo -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa kwesilinganiso samandla Iphrofayili Yokugeleza kabusha P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina izingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, kuzonakwa ukushintshwa ngaphambi kokusetshenziswa. Kunconywa... -
I-RFTXXN-02CR2550B, Isithambisi se-Chip, Isithambisi se-RF
Imodeli RFTXXN-02CR2550B Amandla 2 W Ukumelana XX Ω (10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% I-Coefficient Yokushisa <150ppm/℃ I-Substrate AlN Resistive Element Thick Film Ukusebenza Kwezinga Lokushisa -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa Kwezinga Lokusebenza Kwe-Power Reflow Iphrofayili P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina izingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, kuzonakwa ukushintshwa ngaphambi kokusetshenziswa. Kunconywa... -
I-RFTXXA-02CR3065B Isithambisi se-Chip Isithambisi se-RF
Imodeli RFTXXA-02CR3065B Amandla 2 W Ukumelana XX Ω (10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% I-Coefficient Yokushisa <150ppm/℃ I-Substrate Al2O3 I-Resistive Element Thick Film Ukusebenza Kwezinga Lokushisa -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa kwesilinganiso samandla Iphrofayili Yokugeleza Kabusha P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina izingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, kuzonakwa ukushintshwa ngaphambi kokusetshenziswa. Kunconywa...
