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I-RFTXX-10RM5025C I-Resistor Eholayo
Imodeli RFTXX-10RM5025C Amandla 10 W Ukumelana XX Ω~ (10-3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% Umthamo 1.8 PF@100Ω Izinga lokushisa Coefficient <150ppm/℃ Isembozo se-Substrate BeO AL2O3 Lead 99.99% isiliva elimsulwa i-Resistive Element Thick Film Izinga lokusebenza lokushisa -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa kwesilinganiso samandla Iphrofayili yokugeleza kabusha P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina sezingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, ... -
Isithambisi se-Chip se-RF se-RFXXN-10CR2550C
Imodeli RFTXXN-10CR2550C Amandla 10 W Ukumelana XX Ω (10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% I-Coefficient Yokushisa <150ppm/℃ I-Substrate AlN Resistive Element Thick Film Ukusebenza Kwezinga Lokushisa -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa Kwezinga Lokusebenza Kwe-Power Reflow Iphrofayili P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina izingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, kuzonakwa ukushintshwa ngaphambi kokusetshenziswa. Kunconywa... -
Isithambisi se-Chip se-RF se-RFXX-20CR2550C
Izinqubo eziphakanyisiwe zokufaka i-Power De-rating Reflow Profile P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina izingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, kufanele unake ukushiselwa ngaphambi kokusebenzisa. Kunconywa ukugcina ngemva kokupakisha nge-vacuum. ■Bhoboza ama-thermal vias nge-PCB bese ugcwalisa nge-solder. ■Ukushiselwa kwe-Reflow kukhethwa kakhulu ekushiseni, bheka i-Reflow curve ■ Ukuze kuhlangatshezwane nezidingo zomdwebo, kumele kufakwe i-radiator enobukhulu obanele. ■ Uma kudingeka,... -
I-RFTXX-30CR2550TA Isithambisi Sokumisa Okungaphezulu
Imodeli RFTXX-30CR2550TA Amandla angu-30W Ukumelana XX Ω (10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% I-Coefficient Yokushisa <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ukushisa Okusebenzayo -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa kwesilinganiso samandla Iphrofayili Yokugeleza Kabusha P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina izingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, kuzonakwa ukushintshwa ngaphambi kokusetshenziswa. Kunconywa... -
Isihlukanisi se-Broadband
Ama-Broadband isolators ayizingxenye ezibalulekile ezinhlelweni zokuxhumana ze-RF, ahlinzeka ngezinzuzo eziningi ezenza zifaneleke kakhulu ezinhlelweni ezahlukene. Lawa ma-isolators ahlinzeka ngembobo ye-broadband ukuqinisekisa ukusebenza kahle ebangeni elibanzi lemvamisa. Ngekhono lawo lokuhlukanisa amasignali, angavimbela ukuphazamiseka okuvela kumasignali angaphandle kwebhendi futhi agcine ubuqotho bamasignali angaphakathi kwebhendi. Enye yezinzuzo eziyinhloko zama-isolators e-broadband ukusebenza kwawo okuhle kakhulu kokuhlukaniswa okuphezulu. Ahlukanisa ngempumelelo isignali ekugcineni kwe-antenna, aqinisekise ukuthi isignali ekugcineni kwe-antenna ayibonakali ohlelweni. Ngesikhathi esifanayo, lawa ma-isolators anezici ezinhle zamagagasi okuma kwe-port, anciphisa amasignali abonakalayo futhi agcina ukudluliswa kwesignali okuzinzile.
Ibanga lemvamisa lisukela ku-56MHz kuya ku-40GHz, i-BW ifinyelela ku-13.5GHz.
Izinhlelo zokusebenza zezempi, zesikhala nezentengiselwano.
Ukulahlekelwa okuphansi kokufakwa, ukuhlukaniswa okuphezulu, ukuphathwa kwamandla aphezulu.
Idizayini eyenziwe ngokwezifiso iyatholakala uma iceliwe.
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Isithambisi se-RF se-RFXX-30CR6363C Sokumisa Okungaphezulu
Imodeli RFTXX-30CR6363C Amandla 30W Ukumelana XX Ω (10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% I-Coefficient Yokushisa <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ukusebenza Kwezinga Lokushisa -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa kwesilinganiso samandla Iphrofayili Yokugeleza Kabusha P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina izingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, kuzonakwa ukushintshwa ngaphambi kokusetshenziswa. Kunconywa ... -
Isithambisi Sokumisa Okungaphezulu se-RF se-RFXX-30CR2550W
Imodeli RFTXX-30CR2550W Amandla 30 W Ukumelana XX Ω (10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% I-Coefficient Yokushisa <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ukushisa Okusebenzayo -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa kwesilinganiso samandla Iphrofayili Yokugeleza kabusha P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina izingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, kuzonakwa ukushintshwa ngaphambi kokusetshenziswa. Kunconywa... -
I-RFTXXN-02CR2550B, Isithambisi se-Chip, Isithambisi se-RF
Imodeli RFTXXN-02CR2550B Amandla 2 W Ukumelana XX Ω (10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% I-Coefficient Yokushisa <150ppm/℃ I-Substrate AlN Resistive Element Thick Film Ukusebenza Kwezinga Lokushisa -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa Kwezinga Lokusebenza Kwe-Power Reflow Iphrofayili P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina izingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, kuzonakwa ukushintshwa ngaphambi kokusetshenziswa. Kunconywa... -
I-microstrip attenuator ene-sleeve
I-microstrip attenuator ene-sleeve ibhekisela ku-spiral microstrip attenuation chip enenani elithile le-attenuation elifakwe ku-tube eyindilinga yensimbi enobukhulu obuthile (i-tube ngokuvamile yenziwe ngezinto ze-aluminium futhi idinga i-oxidation eqhubayo, futhi ingafakwa negolide noma isiliva njengoba kudingeka).
Idizayini eyenziwe ngokwezifiso iyatholakala uma iceliwe.
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I-RFTXXA-02CR3065B Isithambisi se-Chip Isithambisi se-RF
Imodeli RFTXXA-02CR3065B Amandla 2 W Ukumelana XX Ω (10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% I-Coefficient Yokushisa <150ppm/℃ I-Substrate Al2O3 I-Resistive Element Thick Film Ukusebenza Kwezinga Lokushisa -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa kwesilinganiso samandla Iphrofayili Yokugeleza Kabusha P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina izingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, kuzonakwa ukushintshwa ngaphambi kokusetshenziswa. Kunconywa... -
Isithambisi se-Chip se-RF se-RF
Imodeli RFTXXN-05CR1530C Amandla 5 W Ukumelana XX Ω ~(10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% I-Coefficient Yokushisa <150ppm/℃ I-Substrate AlN Resistive Element Thick Film Ukusebenza Kwezinga Lokushisa -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa Kwezinga Lokusebenza Kwe-Power Reflow Iphrofayili P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina izingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, kuzonakwa ukushintshwa ngaphambi kokusetshenziswa. Kunconywa... -
Isithambisi se-Chip se-RF se-RFXX-05CR2550W
Imodeli RFTXX-05CR2550W Amandla 5 W Ukumelana XX Ω (10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% I-Coefficient Yokushisa <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ukushisa Okusebenzayo -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa kwesilinganiso samandla Iphrofayili Yokugeleza kabusha P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina izingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, kuzonakwa ukushintshwa ngaphambi kokusetshenziswa. Kunconywa ...
