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Isithambisi se-Chip se-RF se-RFXX-30CR6363C
Imodeli RFTXX-30CR6363C Amandla 30W Ukumelana XX Ω (10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% I-Coefficient Yokushisa <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ukusebenza Kwezinga Lokushisa -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa kwesilinganiso samandla Iphrofayili Yokugeleza Kabusha P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina izingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, kuzonakwa ukushintshwa ngaphambi kokusetshenziswa. Kunconywa ... -
Isithambisi se-RF se-RFXX-30CR2550W
Imodeli RFTXX-30CR2550W Amandla 30 W Ukumelana XX Ω (10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% I-Coefficient Yokushisa <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ukushisa Okusebenzayo -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa kwesilinganiso samandla Iphrofayili Yokugeleza kabusha P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina izingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, kuzonakwa ukushintshwa ngaphambi kokusetshenziswa. Kunconywa... -
Isithambisi se-Chip se-RF se-RFXX-30CR2550TA
Imodeli RFTXX-30CR2550TA Amandla angu-30W Ukumelana XX Ω (10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% I-Coefficient Yokushisa <150ppm/℃ I-Substrate BeO Resistive Element Thick Film Ukushisa Okusebenzayo -55 kuya ku-+150°C (Bheka i-Power De-rating) Izinqubo zokufaka eziphakanyisiwe Ukususwa kwesilinganiso samandla Iphrofayili Yokugeleza Kabusha P/N Isikhundla Sebenzisa ukunaka ■ Ngemva kokuba isikhathi sokugcina izingxenye ezisanda kuthengwa sidlule izinyanga eziyi-6, kuzonakwa ukushintshwa ngaphambi kokusetshenziswa. Kunconywa... -
I-RFTXX-30RM2006 I-Flanged Resistor I-RF Resistor
Imodeli RFTXX-30RM2006 Amandla angu-30 W Ukumelana XX Ω (10~2000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% Umthamo 2.6 PF@100Ω I-Coefficient Yokushisa <150ppm/℃ Isembozo se-Substrate BeO I-AL2O3 Mounting Flange I-Brass Lead 99.99% isiliva elimsulwa I-Resistive Element Thick Film I-Operating Temperature -55 kuya ku-+150°C (Bheka i-Power De-rating) Umdwebo Wohlaka (Iyunithi: mm) Ubude bentambo ye-lead bungahlangabezana nezidingo zekhasimende Usayizi Ukubekezelela：5% ngaphandle kokuthi kuchazwe ngenye indlela Phakamisa... -
Isithambisi se-RF se-RFXX-30RM1306
Imodeli RFTXX-30RM1306 Amandla 30 W Ukumelana XX Ω (10~2000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% Umthamo 2.6 PF@100Ω Izinga lokushisa Coefficient <150ppm/℃ Isembozo se-Substrate BeO I-AL2O3 Mounting Flange I-Brass Lead 99.99% isiliva elimsulwa I-Resistive Element Thick Film Izinga lokusebenza lokushisa -55 kuya ku-+150°C (Bheka i-Power De-rating) Umdwebo Wohlaka (Iyunithi: mm) Ubude bentambo ye-lead bungahlangabezana nezidingo zekhasimende Usayizi Ukubekezelela：5% ngaphandle kokuthi kuchazwe ngenye indlela Phakamisa... -
I-Dual Junction Isolator
I-dual junction isolator iyithuluzi elingasebenzi elivame ukusetshenziswa kuma-microwave kanye nama-millimeter-wave frequency bands ukuhlukanisa izimpawu ezibuyela emuva kusukela ekugcineni kwe-antenna. Yakhiwe ngesakhiwo sama-isolator amabili. Ukulahlekelwa kokufakwa kanye nokuhlukaniswa kwayo kuvame ukuphindwe kabili kune-isolator eyodwa. Uma ukuhlukaniswa kwe-isolator eyodwa kungu-20dB, ukuhlukaniswa kwe-double-junction isolator kungaba ngu-40dB. I-port VSWR ayishintshi kakhulu. Ohlelweni, lapho isignali yemvamisa yomsakazo idluliselwa kusuka echwebeni lokufaka kuya echwebeni lokuqala lendandatho, ngoba ukuphela kokuhlangana kwendandatho yokuqala kufakwe i-resistor yemvamisa yomsakazo, isignali yayo ingadluliselwa kuphela ekugcineni kokungena kwe-junction yesibili yendandatho. I-junction yesibili ye-loop ifana neyokuqala, lapho kufakwe ama-resistors e-RF, isignali izodluliselwa echwebeni lokukhipha, futhi ukuhlukaniswa kwayo kuzoba yisamba sokuhlukaniswa kwama-junction amabili e-loop. Isignali ebuyela emuva evela echwebeni lokukhipha izomuncwa yi-RF resistor echwebeni lesibili lendandatho. Ngale ndlela, kutholakala izinga elikhulu lokuhlukaniswa phakathi kwamachweba okufaka kanye nawokukhipha, okunciphisa ngempumelelo ukubonakaliswa kanye nokuphazamiseka ohlelweni.
Ibanga lemvamisa lisukela ku-10MHz kuya ku-40GHz, amandla afinyelela ku-500W.
Izinhlelo zokusebenza zezempi, zesikhala nezentengiselwano.
Ukulahlekelwa okuphansi kokufakwa, ukuhlukaniswa okuphezulu, ukuphathwa kwamandla aphezulu.
Idizayini eyenziwe ngokwezifiso iyatholakala uma iceliwe.
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Isihlukanisi se-SMT / SMD
I-SMD isolator iyithuluzi lokuhlukanisa elisetshenziselwa ukupakisha nokufaka kwi-PCB (ibhodi lesifunda eliphrintiwe). Lisetshenziswa kabanzi ezinhlelweni zokuxhumana, imishini ye-microwave, imishini yomsakazo, nakwezinye izinkambu. I-SMD isolator zincane, zilula, futhi kulula ukuzifaka, okwenza zifaneleke ezinhlelweni zesekethe ezihlanganisiwe ezinobuningi obukhulu. Okulandelayo kuzonikeza isingeniso esiningiliziwe ngezici kanye nokusetshenziswa kwe-SMD isolator. Okokuqala, i-SMD isolator inezinhlobo eziningi zamakhono okumboza ibhendi yemvamisa. Ngokuvamile imboza ububanzi bemvamisa, njenge-400MHz-18GHz, ukuze ihlangabezane nezidingo zemvamisa zezinhlelo zokusebenza ezahlukene. Leli khono elibanzi lokumboza ibhendi yemvamisa lenza i-SMD isolator isebenze kahle kakhulu ezimweni eziningi zohlelo lokusebenza.
Ibanga lemvamisa lisukela ku-200MHz kuya ku-15GHz.
Izinhlelo zokusebenza zezempi, zesikhala nezentengiselwano.
Ukulahlekelwa okuphansi kokufakwa, ukuhlukaniswa okuphezulu, ukuphathwa kwamandla aphezulu.
Idizayini eyenziwe ngokwezifiso iyatholakala uma iceliwe.
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Isithambisi se-RF se-RF se-RFXX-20RM0904
Imodeli RFTXX-20RM0904 Amandla angu-20 W Ukumelana XX Ω (10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% Umthamo 1.2 PF@100Ω I-Coefficient Yokushisa <150ppm/℃ Isembozo se-Substrate BeO I-AL2O3 Mounting Flange I-Brass Lead 99.99% isiliva elimsulwa I-Resistive Element Thick Film I-Operating Temperature -55 kuya ku-+150°C (Bheka i-Power De-rating) Umdwebo Wohlaka (Iyunithi: mm) Ubude bentambo ye-lead bungahlangabezana nezidingo zekhasimende Usayizi Ukubekezelela：5% ngaphandle kokuthi kuchazwe ngenye indlela Phakamisa... -
I-Microstrip Isolator
Ama-microstrip isolators ayidivayisi ye-RF ne-microwave esetshenziswa kakhulu esetshenziselwa ukudlulisa isignali kanye nokuhlukanisa kumasekethe. Isebenzisa ubuchwepheshe befilimu encane ukudala isekethe phezu kwe-ferrite ejikelezayo, bese ingeza insimu yamagnetic ukuze ifeze lokho. Ukufakwa kwama-microstrip isolators ngokuvamile kusebenzisa indlela yokusonta ngesandla imicu yethusi noma ukubopha ucingo lwegolide. Isakhiwo sama-microstrip isolators silula kakhulu, uma siqhathaniswa nama-coaxial kanye nama-embedded isolators. Umehluko osobala kakhulu ukuthi akukho mgodi, futhi umqhubi we-microstrip isolator wenziwa ngokusebenzisa inqubo yefilimu encane (i-vacuum sputtering) ukudala iphethini eklanyelwe ku-ferrite ejikelezayo. Ngemuva kokufaka i-electroplating, umqhubi okhiqizwayo unamathiselwe ku-substrate ye-ferrite ejikelezayo. Namathisela ungqimba lwe-insulating medium phezulu kwegrafu, bese ulungisa insimu yamagnetic ku-medium. Ngesakhiwo esilula kangaka, kwenziwe i-microstrip isolator.
Ibanga lemvamisa 2.7 kuya ku-43GHz
Izinhlelo zokusebenza zezempi, zesikhala nezentengiselwano.
Ukulahlekelwa okuphansi kokufakwa, ukuhlukaniswa okuphezulu, ukuphathwa kwamandla aphezulu.
Idizayini eyenziwe ngokwezifiso iyatholakala uma iceliwe.
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CT-50W-FH6080-IP65-DINJ-3G DC~3.0GHz Ukunqanyulwa kwe-Intermodulation ephansi
Imodeli CT-50W-FH6080-IP65-DINJ-3G Ububanzi Bokuphindaphindeka DC~3.0GHz VSWR 1.20 Ubuningi be-PIM3 ≥120dBc@2*33dBm Amandla 50W Impedance 50 Ω Uhlobo Lokuxhuma DIN-M (J) Ibanga Elingangeni Manzi IP65 Ubukhulu 60×60×80mm Izinga Lokushisa Lokusebenza -55 ~ +125°C (Bheka i-Power De-rating) Umbala Omnyama Isisindo Cishe 410 g Sebenzisa ukunakwa Ukususwa Kwesilinganiso Samandla P/N Isikhundla -
Isithambisi se-RF se-RFXX-20RM1304
Imodeli RFTXX-20RM1304 Amandla angu-20 W Ukumelana XX Ω (10~3000Ω Okungenziwa Ngokwezifiso) Ukumelana Ukubekezelela ±5% Umthamo 1.2 PF@100Ω I-Coefficient Yokushisa <150ppm/℃ Isembozo se-Substrate BeO I-AL2O3 Mounting Flange I-Brass Lead 99.99% isiliva elimsulwa I-Resistive Element Thick Film I-Operating Temperature -55 kuya ku-+150°C (Bheka i-Power De-rating) Umdwebo Wohlaka (Iyunithi: mm) Ubude bentambo ye-lead bungahlangabezana nezidingo zekhasimende Usayizi Ukubekezelela：5% ngaphandle kokuthi kuchazwe ngenye indlela Iziphakamiso... -
