Ukuqedwa Okuholayo
Imininingwane yobuchwepheshe eyinhloko:
Amandla alinganiselwe: 5-800W;
Izinto ze-Substrate: BeO, AlN, Al2O3
Inani lokumelana lokuzisholo:50Ω
Ukubekezelela ukumelana: ± 5%, ± 2%, ± 1%
I-emperature coefficient:<150ppm/℃
Izinga lokushisa lokusebenza: -55°+150℃
I-ROHS ejwayelekile: Ihambisana nayo
Izinga elisebenzayo: Q/RFTYTR001-2022
Ubude bokuhola: L njengoba kucacisiwe eshidini ledatha
(kungenziwa ngokwezifiso ngokwezidingo zekhasimende)
Amandla(W) | Imvamisa | Ubukhulu (iyunithi: mm) | I-substrateOkubalulekile | Ishidi Ledatha(PDF) | |||||
A | B | H | G | W | L | ||||
5W | 6GHz | 4.0 | 4.0 | 1.0 | 1.6 | 1.0 | 3.0 | Al2O3 | RFT50A-05TM0404 |
11GHz | 1.27 | 2.54 | 0.5 | 1.0 | 0.8 | 3.0 | I-AlN | I-RFT50N-05TJ1225 | |
10W | 4GHz | 2.5 | 5.0 | 1.0 | 1.9 | 1.0 | 4.0 | BeO | RFT50-10TM2550 |
6GHz | 4.0 | 4.0 | 1.0 | 1.6 | 1.0 | 3.0 | Al2O3 | RFT50A-10TM0404 | |
8GHz | 4.0 | 4.0 | 1.0 | 1.6 | 1.0 | 3.0 | BeO | RFT50-10TM0404 | |
10GHz | 5.0 | 3.5 | 1.0 | 1.9 | 1.0 | 3.0 | BeO | RFT50-10TM5035 | |
18GHz | 5.0 | 2.5 | 1.0 | 1.8 | 1.0 | 3.0 | BeO | RFT50-10TM5023 | |
20W | 4GHz | 2.5 | 5.0 | 1.0 | 1.9 | 1.0 | 4.0 | BeO | RFT50-20TM2550 |
6GHz | 4.0 | 4.0 | 1.0 | 1.6 | 1.0 | 3.0 | Al2O3 | I-RFT50N-20TJ0404 | |
8GHz | 4.0 | 4.0 | 1.0 | 1.6 | 1.0 | 3.0 | BeO | RFT50-20TM0404 | |
10GHz | 5.0 | 3.5 | 1.0 | 1.9 | 1.0 | 3.0 | BeO | RFT50-20TM5035 | |
18GHz | 5.0 | 2.5 | 1.0 | 1.8 | 1.0 | 3.0 | BeO | RFT50-20TM5023 | |
30W | 6GHz | 6.0 | 6.0 | 1.0 | 1.8 | 1.0 | 5.0 | I-AlN | I-RFT50N-30TJ0606 |
6.0 | 6.0 | 1.0 | 1.8 | 1.0 | 5.0 | BeO | RFT50-30TM0606 | ||
60W | 6GHz | 6.0 | 6.0 | 1.0 | 1.8 | 1.0 | 5.0 | I-AlN | I-RFT50N-60TJ0606 |
6.0 | 6.0 | 1.0 | 1.8 | 1.0 | 5.0 | BeO | RFT50-60TM0606 | ||
6.35 | 6.35 | 1.0 | 1.8 | 1.0 | 5.0 | BeO | RFT50-60TJ6363 | ||
100W | 3 GHz | 6.35 | 9.5 | 1.0 | 1.6 | 1.4 | 5.0 | I-AlN | I-RFT50N-100TJ6395 |
8.9 | 5.7 | 1.0 | 1.6 | 1.0 | 5.0 | I-AlN | I-RFT50N-100TJ8957 | ||
9.5 | 9.5 | 1.0 | 1.6 | 1.4 | 5.0 | BeO | RFT50-100TJ9595 | ||
4GHz | 10.0 | 10.0 | 1.0 | 1.8 | 1.4 | 5.0 | BeO | I-RFT50-100TJ1010 | |
6GHz | 6.35 | 6.35 | 1.0 | 1.8 | 1.0 | 5.0 | BeO | RFT50-100TJ6363 | |
8.9 | 5.7 | 1.0 | 1.6 | 1.0 | 5.0 | I-AlN | Idatha ye-RFT50N-100TJ8957B | ||
8GHz | 9.0 | 6.0 | 1.5 | 2.0 | 1.0 | 5.0 | BeO | I-RFT50-100TJ0906C | |
150W | 3 GHz | 6.35 | 9.5 | 1.0 | 1.6 | 1.4 | 5.0 | I-AlN | I-RFT50N-150TJ6395 |
9.5 | 9.5 | 1.0 | 1.6 | 1.4 | 5.0 | BeO | RFT50-150TJ9595 | ||
4GHz | 10.0 | 10.0 | 1.0 | 1.8 | 1.4 | 5.0 | BeO | I-RFT50-150TJ1010 | |
6GHz | 10.0 | 10.0 | 1.0 | 1.8 | 1.4 | 5.0 | BeO | Idatha ye-RFT50-150TJ1010B | |
200W | 3 GHz | 9.5 | 9.5 | 1.0 | 1.6 | 1.4 | 5.0 | BeO | RFT50-200TJ9595 |
4GHz | 10.0 | 10.0 | 1.0 | 1.8 | 1.4 | 5.0 | BeO | I-RFT50-200TJ1010 | |
10GHz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5.0 | BeO | I-RFT50-200TM1313B | |
250W | 3 GHz | 12.0 | 10.0 | 1.5 | 2.5 | 1.4 | 5.0 | BeO | RFT50-250TM1210 |
10GHz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5.0 | BeO | I-RFT50-250TM1313B | |
300W | 3 GHz | 12.0 | 10.0 | 1.5 | 2.5 | 1.4 | 5.0 | BeO | RFT50-300TM1210 |
10GHz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5.0 | BeO | I-RFT50-300TM1313B | |
400W | 2GHz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5.0 | BeO | RFT50-400TM1313 |
500W | 2GHz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5.0 | BeO | RFT50-500TM1313 |
800W | 1 GHz | 25.4 | 25.4 | 3.2 | 4 | 6 | 7 | BeO | RFT50-800TM2525 |
Ukunqanyulwa Okuholayo kwenziwa ngokukhetha usayizi ofanele we-substrate nezinto zokwakha ezisuselwe ezidingweni ezihlukene zemvamisa kanye nezidingo zamandla, ngokumelana, ukuphrinta kwesekethe, kanye ne-sintering.Izinto ezisetshenziswa kakhulu ze-substrate zingaba ikakhulukazi i-beryllium oxide, i-aluminium nitride, i-aluminium oxide, noma izinto ezingcono zokulahla ukushisa.
Ukuqedwa Okuholayo, kuhlukaniswe inqubo yefilimu emincane kanye nenqubo yefilimu ewugqinsi.Yakhelwe ngokusekelwe kumandla athile kanye nezidingo zemvamisa, bese icutshungulwa ngenqubo.Uma unezidingo ezikhethekile, sicela uxhumane nabasebenzi bethu bokuthengisa ukuze banikeze izixazululo ezithile zokwenza ngokwezifiso.